FEI Introduces Three Transmission Electron Microscopy Systems for Semiconductors and Materials

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FEI Co. has launched the new Metrios TEM (transmission electron microscope) for advanced semiconductor manufacturing metrology; the Talos TEM that provides high-speed imaging and analysis for materials science; and the Titan Themis TEM for enhanced atomic-scale measurements of material properties. The Metrios system is the first TEM dedicated to providing the fast, precise measurements that semiconductor manufacturers need to develop and control their wafer fabrication processes.

 The Metrios system is the first TEM dedicated to providing the fast, precise measurements that semiconductor manufacturers need to develop and control their wafer fabrication processes. Extensive automation of the basic TEM operation and measurement procedures minimizes requirements for specialized operator training. Its advanced automated metrology routines deliver greater precision than manual methods. The Metrios TEM is designed to provide customers with improved throughput and lower cost-per-sample than other TEMs.

The Talos TEM combines high-resolution, high-throughput TEM imaging with fast, precise, and quantitative energy dispersive x-ray (EDX) analysis.  The new TEM is available with FEI’s highest brightness electron source and latest EDX detector technology to provide high-efficiency detection of low concentration and light elements, along with FEI’s exclusive 3D EDS tomography. Excellent performance at lower accelerating voltages permits the use of lower beam energies to reduce sample damage on delicate materials.

 The Talos platform is completely digital, allowing for remote operation, and it also enables the addition of application-specific detectors or sample holders for dynamic experiments. With enhanced automation and ease-of-use, the Talos is especially well-suited for the individual investigator as well as multi-user laboratory environments.

For more information, visit www.fei.com.